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Performance improvement of oxide thin-film transistors with a two-step-annealing method

Identifieur interne : 000061 ( Main/Repository ); précédent : 000060; suivant : 000062

Performance improvement of oxide thin-film transistors with a two-step-annealing method

Auteurs : RBID : Pascal:14-0025767

Descripteurs français

Pascal (Inist)
- Evaluation performance, Transistor couche mince, Méthode à pas, Recuit, Contrainte électrique, Eclairement, Contrainte thermique, Densité état, Oxyde d'indium, Oxyde de zinc, Couche oxyde, Semiconducteur.

English descriptors

KwdEn :
- Annealing, Density of states, Electric stress, Illumination, Indium oxide, Oxide layer, Performance evaluation, Semiconductor materials, Step method, Thermal stress, Thin film transistor, Zinc oxide.

Abstract

In this paper, a thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method in which the IZO film experienced annealing steps before the etch-stopper-layer formation and after the whole device completion. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one post annealing step. The calculated falling rate of the Fermi lever of the IZO channel for the two-step annealing device was as high as 0.593 eV/V, compared to 0.213 eV/V for the only-post-annealing-step one. And the corresponding density of subgap state was 4.4 x 10¹⁵ and 1.6 x 10¹⁶ eV^-1 cm^-3 for the device with two annealing steps and with only one post annealing step, respectively.

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Pascal:14-0025767

Le document en format XML

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<author><name>MIN LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou 510640</wicri:noRegion>
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</author>
<author><name>LINFENG LAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou 510640</wicri:noRegion>
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</author>
<author><name>MIAO XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<author><name>HUA XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<author><name>DONGXIANG LUO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
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<author><name>PENG XIAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<wicri:noRegion>Guangzhou 510640</wicri:noRegion>
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<author><name>JUNBIAO PENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescent Materials and Devices, South China University of Technology</s1>
<s2>Guangzhou 510640</s2>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Density of states</term>
<term>Electric stress</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Oxide layer</term>
<term>Performance evaluation</term>
<term>Semiconductor materials</term>
<term>Step method</term>
<term>Thermal stress</term>
<term>Thin film transistor</term>
<term>Zinc oxide</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term>
<term>Transistor couche mince</term>
<term>Méthode à pas</term>
<term>Recuit</term>
<term>Contrainte électrique</term>
<term>Eclairement</term>
<term>Contrainte thermique</term>
<term>Densité état</term>
<term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>Couche oxyde</term>
<term>Semiconducteur</term>
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<front><div type="abstract" xml:lang="en">In this paper, a thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method in which the IZO film experienced annealing steps before the etch-stopper-layer formation and after the whole device completion. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one post annealing step. The calculated falling rate of the Fermi lever of the IZO channel for the two-step annealing device was as high as 0.593 eV/V, compared to 0.213 eV/V for the only-post-annealing-step one. And the corresponding density of subgap state was 4.4 x 10<sup>15</sup>
 and 1.6 x 10<sup>16</sup>
 eV<sup>-1</sup>
 cm<sup>-3</sup>
 for the device with two annealing steps and with only one post annealing step, respectively.</div>
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<fA11 i1="01" i2="1"><s1>MIN LI</s1>
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<fC01 i1="01" l="ENG"><s0>In this paper, a thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method in which the IZO film experienced annealing steps before the etch-stopper-layer formation and after the whole device completion. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one post annealing step. The calculated falling rate of the Fermi lever of the IZO channel for the two-step annealing device was as high as 0.593 eV/V, compared to 0.213 eV/V for the only-post-annealing-step one. And the corresponding density of subgap state was 4.4 x 10<sup>15</sup>
 and 1.6 x 10<sup>16</sup>
 eV<sup>-1</sup>
 cm<sup>-3</sup>
 for the device with two annealing steps and with only one post annealing step, respectively.</s0>
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<fN44 i1="01"><s1>OTO</s1>
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Performance improvement of oxide thin-film transistors with a two-step-annealing method

Performance improvement of oxide thin-film transistors with a two-step-annealing method

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri